Ruthenium layer formation for copper film deposition
AssigneeApplied Materials, Inc.
InventorsMei Chang, Seshadri Ganguli, Nirmalya Maity
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Abstract
A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.
Claims52
A method of forming a film on a substrate, comprising:
- positioning the substrate within a process chamber;
- and
- forming a ruthenium layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a ruthenium-containing compound and a reducing gas.
A method of forming a ruthenium layer on a substrate for use in integrated circuit fabrication, comprising:
- positioning the substrate within a process chamber, wherein the process chamber is in fluid communication with a gas delivery system;
- delivering a ruthenium-containing compound from the gas delivery system to the process chamber;
- chemisorbing a ruthenium-containing layer on the substrate;
- delivering a reducing gas from the gas delivery system to the process chamber;
- and
- reacting the reducing gas with the ruthenium-containing layer to form the ruthenium layer on the substrate.
A method for forming a layer comprising ruthenium on a substrate surface within a process chamber, sequentially comprising:
- a) exposing the substrate surface to a ruthenium-containing compound to form a ruthenium-containing layer on the substrate surface;
- b) purging the process chamber with a purge gas;
- c) reacting a reducing gas with the ruthenium-containing layer;
- and
- d) purging the process chamber with the purge gas.
A method of forming a ruthenium layer on a substrate, comprising:
- positioning the substrate within a process chamber, wherein the process chamber comprises:
- a substrate support having the substrate;
- a chamber lid comprising a passageway at a central portion of the chamber lid and comprising a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate;
- one or more valves coupled to the passageway;
- one or more gas sources coupled to each valve;
- and
- a reaction zone defined between the chamber lid and the substrate, the reaction zone comprising a small volume;
- and
- forming the ruthenium layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a ruthenium-containing compound and a reducing gas.
Dependencies are inferred from the claim text.