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US 2004/0105486 A1Published application
Method and apparatus for detecting contaminants in ion-implanted wafer
AssigneeSamsung Electrics Co., Ltd.
InventorsYu-Sin Yang, Sang-Mun Chon, Sun-Yong Choi, Chung Sam Jun, Kwan-Woo Ryu, Park-Song Kim, Tae-Min Eom
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Abstract
A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.
Claims15
A method for detecting contaminants in an ion-implanted wafer, comprising the steps of:
- converting the wafer into a crystalline wafer by annealing the wafer;
- activating the crystalline wafer thereby forming an activated wafer;
- and
- measuring thermal wave absorbance generated from the activated wafer.
1 more element
An apparatus for detecting contaminants in an ion-implanted wafer comprising:
- first stage for supporting a crystalline wafer which has been ion-implanted and annealed;
- activating means for activating the crystalline wafer disposed on the first stage to form an activated wafer;
- second stage for supporting the activated wafer;
- transferring means for transferring the activated wafer onto the second stage;
- and
- thermal wave measurement means for measuring a thermal wave absorbance generated from the activated wafer disposed on the second stage.
3 more elements
Dependencies are inferred from the claim text.