Semiconductor laser device including cladding layer having stripe portion different in conductivity type from adjacent portions
AssigneeSharp Kabushiki Kaisha
InventorSyuzo Ohbuchi
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Abstract
A semiconductor laser device has a pair of cladding layers with an active layer interposed therebetween. At least one of the cladding layers is of the same composition through the entire region of the cladding layer, excluding a dopant in the cladding layer, and has a stripe portion different in conductivity type from adjacent portions.
Claims8
A semiconductor laser device having a pair of cladding layers with an active layer interposed therebetween, wherein at least one of the cladding layers is of the same composition through an entire region of the cladding layer, excluding a dopant in the cladding layer, and has a stripe portion different in conductivity type from adjacent portions.
Dependencies are inferred from the claim text.