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US 2004/0105471 A1Published application
Structure for nitride based laser diode with growth substrate removed
AssigneeXerox Corporation
InventorsMICHAEL A. KNEISSL, DAVID P. BOUR, PING MEI, LINDA T. ROMANO
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Abstract
A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
Claims10
A structure for a nitride laser diode array comprising:
- a semiconductor membrane comprising a plurality of active layers, said semiconductor membrane having a first crystal plane;
- a thermally conducting substrate having a second crystal plane, said thermally conducting substrate supporting said semiconductor membrane and being attached to said semiconductor membrane by thermo-compression bonding to enhance thermal coupling between said thermally conducting substrate and said plurality of active layers;
- a metal layer disposed between said semiconductor membrane and said thermally conducting substrate;
- and
- a plurality of electrodes to electrically bias said laser diode array.
2 more elements
Dependencies are inferred from the claim text.