Nonvolatile semiconductor storage device and row-line short defect detection method

A row-line short defect detection method for detecting a row-line short defect in a nonvolatile semiconductor storage device comprising:

• a memory array configured such that a plurality of nonvolatile semiconductor memory cells capable of storing one-bit information or multi-bit information are individually arranged in a row direction and a column direction, and a plurality of row lines and a plurality of column lines are arranged to select a predetermined memory cell or memory cells from the plurality of memory cells;
• and
• a row decoder circuit that selects a part of the plurality of row lines and that selectively provides a selected row line with a voltage level different from that for other row lines,
• the row-line short defect detection method comprising the step of, in a test mode different from a normal operation mode, isolating a current path in the device into a first current path for a current flowing through the row line selected and a second current path for a current not flowing through the row line but flowing through the row decoder circuit, the current path isolated being formed for supplying a testing voltage to the selected row line from a testing voltage source.