Non-volatile memory and fabrication thereof
AssigneeMacronix International Co., Ltd.
InventorsTung-Cheng Kuo, Chien-Hung Liu, Shyi-Shuh Pan, Shou-Wei Huang
Life of this patent
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Abstract
A non-volatile memory and the fabrication thereof are described. The non-volatile memory comprises a word-line on a substrate, a charge trapping layer between the word-line and the substrate, and a contact electrically connecting with the word-line over the substrate. In addition, there is a protective metal line electrically connecting with the word-line and with a grounding doped region in the substrate via different contacts, respectively. The protective metal line has a resistance higher than that of the word-line.
Claims14
A non-volatile memory, comprising:
- a substrate;
- a word-line on the substrate;
- a charge trapping layer between the substrate and the word-line;
- a contact disposed over the substrate electrically connecting with the word-line;
- and
- a protective metal line electrically connecting with the contact and with a grounding doped region in the substrate, wherein the protective metal line has a first resistance higher than a second resistance of the word-line.
A method for fabricating a non-volatile memory, comprising the steps of:
- forming a non-volatile memory cell on a substrate;
- forming a grounding doped region in the substrate;
- forming a first contact on the substrate electrically connecting with the grounding doped region;
- forming a second contact on the substrate electrically connecting with a word-line of the non-volatile memory cell;
- forming a protective metal line having a first resistance higher than a second resistance of the word-line over the substrate, wherein the protective metal line is electrically connected with the grounding doped region via the first contact and is electrically connected with the word-line via the second contact;
- and
- applying a large current to blow the protective metal line.
Dependencies are inferred from the claim text.