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US 2004/0105305 A1Published application
High output nonvolatile magnetic memory
AssigneeHitachi, Ltd.
InventorJun Hayakawa
Life of this patent
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Abstract
A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.
Claims20
A nonvolatile magnetic memory comprising:
- a bit line;
- a word line;
- and
- a layered element having a layered structure including,
- a pn diode,
- a first ferromagnetic layer,
- a nonmagnetic layer,
- a second ferromagnetic layer,
- a tunnel barrier between ferromagnetic layers, and
- a third ferromagnetic layer all of which are layered in this order, wherein the word line is electrically connected to the diode, wherein the bit line is electrically connected to the third ferromagnetic layer.
7 more elements
Dependencies are inferred from the claim text.