Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorYoshiaki Fukuzumi
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Abstract
An MRAM includes a magnetoresistance element configured to store data, an electric current drive line configured to selectively apply a magnetic field to the magnetoresistance element, and a magnetic circuit configured to hold the magnetic field applied from the electric current drive line. The electric current drive line includes a first side facing the magnetoresistance element, a second side reverse to the first side, and two lateral sides between the first and second sides. The magnetic circuit includes a pair of film members consisting essentially of a ferromagnetic material and extending along the two lateral sides of the electric current drive line, such that portions facing the first and second sides of the electric current drive line are left open.
Claims19
A magnetic random access memory comprising:
- a magnetoresistance element configured to store data;
- an electric current drive line configured to selectively apply a magnetic field to the magnetoresistance element;
- and
- a magnetic circuit configured to hold the magnetic field applied from the electric current drive line,
- wherein the electric current drive line comprises a first side facing the magnetoresistance element, a second side reverse to the first side, and two lateral sides between the first and second sides, and
- the magnetic circuit comprises a pair of film members consisting essentially of a ferromagnetic material and extending along the two lateral sides of the electric current drive line, such that portions facing the first and second sides of the electric current drive line are left open.
A magnetic random access memory comprising:
- a memory cell array including memory cells respectively disposed at addresses arranged in a matrix format, each of the memory cells including a magnetoresistance element as a storing element;
- word lines respectively connected to rows of the memory cell array;
- bit lines respectively connected to columns of the memory cell array;
- partition walls extending along and between respective pairs of electric current drive lines, which are the word lines or the bit lines configured to selectively apply magnetic fields respectively to the magneto resistive elements, wherein each of the partition walls comprises first and second film members consisting essentially of a ferromagnetic material and forming parts of first and second magnetic circuits, which are configured to respectively hold magnetic fields applied from first and second electric current drive lines extending adjacent to and parallel with each other, and the first and second film members are electrically insulated from the first and second electric current drive lines respectively by insulating layers.
Dependencies are inferred from the claim text.