Soldermask opening to prevent delamination

An electrical device, comprising:

• an integrated circuit supported by a base layer and having a plurality of integrated circuit devices, wherein at least one of the plurality of integrated circuit devices has a semiconductor structure formed by a method comprising:
• forming an insulator layer on a base layer, wherein the insulator layer has a surface;
• patterning the insulator layer to define a hole, wherein the hole has sidewalls defined by the insulator layer and a bottom defined by an exposed portion of the base layer;
• forming at least one titanium-containing layer overlying the surface of the insulator layer and the sidewalls and the bottom of the hole by chemical vapor deposition;
• forming a plug layer overlying the titanium-containing layer and filling the hole;
• and
• removing a portion of the plug layer overlying the surface of the insulator layer subsequent to removing the portion of the plug layer by exposing the portion of the titanium-containing layer to a sulfuric acid solution.