Spin valve transistor with stabilization and method for producing the same
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsRobert E. Fontana JR., Jeffrey S. Lille
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AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorsRobert E. Fontana JR., Jeffrey S. Lille
Estimating the term…
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
A spin valve transistor comprising:
A spin valve transistor comprising:
A method of manufacturing a spin valve transistor, said method comprising:
A magnetic head comprising:
A disk drive including a magnetic head comprising:
Dependencies are inferred from the claim text.