Continuous free layer spin valve sensor with patterned exchange underlayer stabilization
AssigneeHeadway Technologies, Inc.
InventorsTai Min, Po-Kang Wang, Moris Musa Dovek
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Abstract
A spin valve device comprises a free layer, a spacer layer, a pinned layer, an antiferromagnetic layer, and a patterned underlayer that includes a magnetic material for providing trackwidth and longitudinal bias. The patterned underlayer can comprise a buffer layer, an antiferromagnetic layer and a ferromagnetic layer. Alternatively, the patterned underlayer can comprises a buffer layer, a chromium layer and a hard biasing, permanent magnetic layer which provides trackwidth and longitudinal bias. A lower conductor can be located on the underlayer.
Claims44
A spin valve device comprising:
- a free layer (FL)
- a spacer layer (CU),
- a pinned layer (PIL),
- an antiferromagnetic layer (AFM2), and
- a patterned underlayer that includes a magnetic material (TFM, PM) for providing trackwidth and longitudinal bias.
A method of forming a spin valve device comprising:
- forming a patterned underlayer including a magnetic material for providing trackwidth and longitudinal bias,
- forming a free layer,
- forming a pinned layer,
- forming a spacer layer, and
- forming an antiferromagnetic layer.
A method of forming a spin valve device comprising:
- forming a patterned underlayer including a permanent magnetic material for providing trackwidth, longitudinal bias, and exchange stabilization,
- forming a free layer,
- forming a pinned layer,
- forming a spacer layer, and
- forming an antiferromagnetic layer.
Dependencies are inferred from the claim text.