Efficient messaging in a parallel processing system
OwnerMark S. Myersinventor
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Abstract
A reflective optical mirror for semiconductor fabrication includes a capping layer above a reflective multilayer sequence. A doping is provided for the capping layer and an artificial oxide layer is grown on the capping layer with the aid of hydrogen peroxide, in particular in the presence of a catalyst. The artificially grown oxide layer is more homogeneous than a naturally grown oxide and thereby improves optical properties of the mirror during a lithographic exposure of semiconductor products.
Claims18
A method for producing a reflective mirror for the lithographic exposure of semiconductor products, which comprises the following steps:
- forming a multilayer structure on a substrate;
- producing a capping layer above the multilayer structure from a doped material on which a natural oxide layer forms in air;
- and
- bringing the capping layer into contact with hydrogen peroxide resulting in an artificially grown oxide layer forming on the capping layer.
A reflective optical mirror for the lithographic exposure of semiconductor products, the mirror comprising:
- a substrate;
- a multilayer structure disposed above said substrate for reflecting electromagnetic radiation through constructive interference;
- and
- a capping layer disposed above said multilayer structure, said capping layer formed of a material on which a natural oxide layer forms in air, said material of said capping layer being doped with a doping and said oxide layer including a region having a layer thickness with the same doping as said doping of said capping layer being incorporated into an oxide of said oxide layer.
Dependencies are inferred from the claim text.