Method of and apparatus for measuring thickness of thin film or thin layer
AssigneeShimadzu Corporation
InventorsKazunari Shinya, Takashi Nishimura
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AssigneeShimadzu Corporation
InventorsKazunari Shinya, Takashi Nishimura
Estimating the term…
The present invention provides a method of measuring the thickness of a thin film or thin layer by a spectroscopic measurement, which is applicable to the measurement of a multiple layered film whose layers have different refractive indices. According to the method, an interference light from the film is measured to create a measured spectrum. The waveform of the measured spectrum can be approximately represented by a linear sum of base spectrums. Accordingly, various constructed spectrums are created using base spectrums each having a cycle interval as a parameter. Then, the constructed spectrum that minimizes the square error against the measured spectrum is identified. The least square error is calculated for each of predetermined cycle intervals. A graph is drawn to represent the relation between the least square error and the cycle interval. The correspondence between the layers and the plural minimum points of the least square error appearing on the graph is determined. The thickness of each layer is calculated from the cycle interval at which the minimum point appears and the refractive index of the layer.
A method of measuring a thickness of every layer of a thin film consisting of a single or multiple layers, comprising steps of:
An apparatus for measuring a thickness of every layer of a thin film consisting of a single or multiple layers, comprising:
A method of measuring a thickness of every layer of a thin film consisting of a single or multiple layers, comprising steps of:
An apparatus for measuring a thickness of a thin film consisting of a single or multiple layers, comprising:
Dependencies are inferred from the claim text.