Method and apparatus for forming substrate for semiconductor or the like
AssigneeAdvanced LCD Technologies Development Center Co., Ltd.
InventorYoshio Takami
Life of this patent
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Abstract
In an apparatus which determines characteristics of a thin film according to the present invention, a temporal change in a refractive index n and an extinction coefficient k of a thin film in a period from start of a change in the thin film as a processing target (e.g., melting) to end of the change (e.g., solidification) can be obtained with a high time resolution of pico-seconds. Based on this, it is possible to know a progress of a change in state of the thin film (e.g., crystallization) or a transition of growth of crystal grains in units of pico-seconds.
Claims50
A method for determining characteristics of a thin film, comprising:
- irradiating with a monitor light ray at least a position of a processing target which is irradiated with a light energy which can perform predetermined processing or finishing;
- detecting a reflected light ray generated from the processing target by the monitor light ray by a light sensing mechanism having a plurality of substantially continuous light sensing elements;
- and
- measuring a temporal change in an angle distribution of an intensity of the reflected light detected by the light sensing mechanism.
An apparatus for specifying a processing state and/or a finishing state of a processing target, comprising:
- a monitor light generation device which can irradiate with a monitor light ray at least a position of a processing target which is irradiated with a light energy which can perform predetermined processing or finishing;
- a light sensing mechanism which detects a reflected light ray generated from the processing target irradiated with the monitor light ray, and detects electrons corresponding to the reflected light ray and/or a light ray obtained by converting the electrons corresponding to the reflected light ray;
- and
- a reflected light measurement mechanism which measures a temporal change in an angle distribution of an intensity of the reflected light ray detected by the light sensing mechanism.
An apparatus for determining characteristics of a semiconductor thin film irradiated with an annealing laser beam, comprising:
- a monitor light irradiator which irradiates with a monitor light ray a position irradiated with the laser beam;
- and
- a reflected light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a light sensing surface having a plurality of substantially continuous light sensing elements, and measures a temporal change in an angle distribution of an intensity of the reflected light ray.
An apparatus for determining characteristics of a thin film, comprising:
- a monitor light irradiator which irradiates a monitor light ray having a polarization light in a direction of the polarization light is a predetermined direction, and the monitor light ray is condensed on the thin film through a lens system;
- and
- a light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a light sensing surface having a plurality of substantially continuous light sensing elements, and measures a temporal change in an angle distribution of an intensity of the reflected light ray.
An apparatus for determining characteristics of a thin film, comprising:
- a monitor light irradiator which irradiates a monitor light ray having a polarization light in a direction of the polarization light is a predetermined direction, and the monitor light ray is condensed on the thin film through a lens system;
- a first light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a first light sensing surface having a plurality of substantially continuous light sensing elements, and measures a temporal change in an angle distribution of an intensity of the reflected light ray;
- and
- a second light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a second light sensing surface having a plurality of substantially continuous light sensing elements each arranged orthogonal to the first light measurement device, and measures a temporal change in an angle distribution of an intensity of the reflected light ray.
An apparatus for determining characteristics of a thin film, comprising:
- a monitor light irradiator which irradiates a monitor light ray having at least one of the S polarization light and the P polarization light, and the monitor light ray is condensed on the thin film through a lens system;
- and
- a light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a light sensing surface having a plurality of substantially continuous light sensing elements, and measures a temporal change in an angle distribution of an intensity of the reflected light ray.
An apparatus for determining characteristics of a thin film, comprising:
- a monitor light irradiator which irradiates a monitor light ray having at least one of the S polarization light and the P polarization light, and the monitor light ray is condensed on the thin film through a lens system;
- a first light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a first light sensing surface having a plurality of substantially continuous light sensing elements, and measures a temporal change in an angle distribution of an intensity of the reflected light ray;
- and
- a second light measurement device which receives a reflected light ray of the monitor light ray from the thin film, has a second light sensing surface having a plurality of substantially continuous light sensing elements each arranged orthogonal to the first light measurement device, and measures a temporal change in an angle distribution of an intensity of the reflected light ray.
A method for determining characteristics of a thin film, comprising:
- irradiating with a monitor light ray includes a polarization light in a direction of the polarization is a predetermined direction which is irradiated with a light energy which can perform predetermined processing or finishing;
- detecting a reflected light ray generated from the processing target by the polarization light of the monitor light ray by a light sensing mechanism having a plurality of substantially continuous light sensing elements;
- and
- measuring a temporal change in an angle distribution of an intensity of the reflected the light detected by the light sensing mechanism.
A method for determining characteristic of thin film, comprising:
- irradiating with a monitor light ray includes a polarization light in a direction of the polarization is a predetermined direction which is irradiated with a light energy which can perform predetermined processing or finishing;
- detecting a reflected light ray generated from the processing target by the polarization light of the monitor light ray by a light sensing mechanism having a plurality of substantially continuous light sensing elements;
- measuring a temporal change in an angle distribution of an intensity of the reflected the light detected by the light sensing mechanism;
- and
- calculating a temporal change in a refractive index and an extinction coefficient of the processing target based on the measured temporal change in the angle distribution of the intensity of the reflected light.
A method for determining characteristic of thin film, comprising:
- irradiating with a monitor light ray includes at least one of the S polarization light and the P polarization light orthogonal the each of polarization direction which is irradiated with a light energy which can perform predetermined processing or finishing;
- detecting a reflected light ray generated from the processing target by the first polarization light of the monitor light ray by a first light sensing mechanism having a plurality of substantially continuous light sensing elements;
- detecting a reflected light ray generated from the processing target by the second polarization light of the monitor light ray by a second light sensing mechanism having a plurality of substantially continuous light sensing elements arranged orthogonal to the light sensing elements of the first light sensing mechanism;
- and
- measuring a temporal change in an angle distribution of an intensity of the reflected the first and second lights each detected by the first and the light sensing mechanisms.
A method for determining characteristic of thin film, comprising:
- irradiating with a monitor light ray includes at least one of the S polarization light and the P polarization light orthogonal the each of polarization direction which is irradiated with a light energy which can perform predetermined processing or finishing;
- detecting a reflected light ray generated from the processing target by the first polarization light of the monitor light ray by a first light sensing mechanism having a plurality of substantially continuous light sensing elements;
- detecting a reflected light ray generated from the processing target by the second polarization light of the monitor light ray by a second light sensing mechanism having a plurality of substantially continuous light sensing elements arranged orthogonal to the light sensing elements of the first light sensing mechanism;
- measuring a temporal change in an angle distribution of an intensity of the reflected the first and second lights each detected by the first and the light sensing mechanisms;
- and
- calculating a temporal change in a refractive index and an extinction coefficient of the processing target based on the measured temporal change in the angle distribution of the intensity of the reflected first and second lights.
Dependencies are inferred from the claim text.