Lithographic apparatus and device manufacturing method
AssigneeASML Netherlands B.V.
InventorsRalph Kurt, Andrei Evgenuevich Iakchine Yakshin
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Abstract
An optical element of a lithographic projection apparatus includes a Si/Mo multilayer structure, an outer capping layer and an interlayer positioned between the multilayer structure and the outer capping layer. The interlayer has a thickness of between 0.3 and 0.7 times the wavelength of the incident radiation. The interlayer may be C or Mo and has a thickness of between 6.0 and 9.0 nm. The interlayer may include an inner interlayer including Mo next to the multilayer structure and an outer interlayer including C next to the capping layer. The outer interlayer is at least 3.4 nm thick and the capping layer is Ru and at least 2.0 nm thick.
Claims24
A lithographic projection apparatus, comprising:
- a radiation system configured to provide a projection beam of radiation;
- a support configured to support patterning device, the patterning device configured to pattern the projection beam according to a desired pattern;
- a substrate table configured to hold a substrate;
- a projection system configured to project the patterned beam onto a target portion of the substrate;
- and
- at least one optical element on which the projection beam is incident having a Si/Mo multilayer structure, a capping layer, and an interlayer comprising C or Mo positioned between the multilayer structure and the capping layer, wherein the interlayer has a thickness of between 6.0 and 9.0 nm.
A lithographic projection apparatus, comprising:
- a radiation system configured to provide a projection beam of radiation;
- a support configured to support a patterning device, the patterning device configured to pattern the projection beam according to a desired pattern;
- a substrate table configured to hold a substrate;
- a projection system configured to project the patterned beam onto a target portion of the substrate;
- and
- at least one optical element on which the projection beam is incident having a Si/Mo multilayer structure, a capping layer, and an interlayer positioned between the multilayer structure and the capping layer, wherein the interlayer comprises an inner interlayer comprising Mo next to the multilayer structure and an outer interlayer comprising C next to the capping layer, the outer interlayer C has a thickness greater than 3.4 nm or the capping layer has a thickness greater than 2.0 nm.
A device manufacturing method, comprising:
- providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
- providing a patterned projection beam of radiation;
- projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material using at least one optical element on which the projection beam is incident, wherein the at least one optical element has a Si/Mo multilayer structure, a capping layer, and an interlayer comprising C or Mo positioned between the multilayer structure and the capping layer, the interlayer has a thickness of between 6.0 and 9.0 nm.
A device manufacturing method, comprising:
- providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
- providing a patterned projection beam of radiation;
- projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material using at least one optical element on which the projection beam is incident, wherein the at least one optical element has a Si/Mo multilayer structure, an outer capping layer, and an interlayer positioned between the multilayer structure and the outer capping layer, the interlayer comprises an inner interlayer comprising Mo next to the multilayer structure and an outer interlayer comprising C next to the capping layer, the outer interlayer has a thickness greater than 3.4 nm or the capping layer has a thickness greater than 2.0 nm.
An optical element for use in a lithographic projection apparatus, the optical element comprising:
- a Si/Mo multilayer structure;
- a capping layer;
- and
- an interlayer positioned between the multilayer structure and the capping layer, wherein the interlayer comprises one of:
- a layer comprising C or Mo, the layer having a thickness of between 6.0 and 9.0 nm;
- and
- an inner interlayer comprising Mo next to the multilayer structure and an outer interlayer comprising C next to the capping layer, the outer interlayer having a thickness greater than 3.4 nm or the capping layer having a thickness greater than 2.0 nm.
Dependencies are inferred from the claim text.