Electro-optical device and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsTakumi Seki, Atsushi Kitagawa
Life of this patent
Estimating the term…
Abstract
The invention provides an active matrix type electro-optical device and an electronic apparatus using the same capable of preventing interference of light due to contact holes and interference of reflecting light from light-reflecting film. In a thin film transistor (TFT) array substrate of a reflective active matrix type electro-optical device, a light-reflecting film can be formed in a contact hole, but positions of the contact holes for electrically connecting a pixel electrode to a drain electrode, and irregular pattern for scattering light formed on the surface of the reflection film by a lower side irregularity-formation film are different in each of pixels formed in a matrix.
Claims16
An active matrix type electro-optical device, comprising:
- a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material;
- and
- each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,
- the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,
- wherein, when the pixels are grouped into a plurality of units of n×m pixels, a pattern of contact hole formation-position are different in each of the units.
An active matrix type electro-optical device, comprising:
- a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material;
- and
- each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,
- the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,
- wherein, when the plurality of pixels are grouped into a plurality of units of n×m pixels, contact-hole formation positions are different for each unit.
An active matrix type electro-optical device, comprising:
- a plurality of pixels arranged in a matrix on a substrate holding an electro-optical material;
- and
- each pixel including a thin film transistor that switches pixels, an irregularity forming film on which a plurality of irregularities including protrusions or holes are dispersed, and a light-reflecting film formed on the irregularity forming film,
- the light-reflecting film having on its surface an irregular pattern that scatters light due to the irregularity forming film, and the light-reflecting film being formed in contact holes which are formed in an interlayer insulating film,
- contact-hole formation positions being different for each pixel.
Dependencies are inferred from the claim text.