Thin film transistor, liquid crystal display panel, and method of manufacturing thin film transistor

A thin film transistor comprising:

• a source electrode provided on a predetermined insulating substrate;
• a drain electrode disposed by keeping a predetermined interval from said source electrode;
• a semiconductor layer disposed so as to contact said source electrode and said drain electrode and connect said both electrodes each other;
• a gate insulating film for covering said semiconductor layer;
• and
• a gate electrode disposed adjacently to said gate insulating film;
• wherein said gate electrode is patterned by being provided with a protruded portion almost orthogonal to said source electrode and said drain electrode and said semiconductor layer and said gate insulating film are pattern-formed in accordance with said patterning of said gate electrode, and
• said drain electrode is disposed nearby said root of said protruded portion on said gate electrode to said source electrode.

A liquid-crystal display panel having a pixel electrode and a thin-film-transistor-channel structure for applying a voltage to said pixel electrode, comprising:

• a gate line for forming a gate electrode in said thin-film-transistor-channel structure;
• and
• a signal line connected to a signal electrode in said thin-film-transistor-channel structure;
• and
• a semiconductor layer to be patterned under a state along said gate line by exceeding said thin-film-transistor-channel structure;
• wherein
• said signal electrode is configured so as to prevent said current incoming through said semiconductor layer from an adjacent signal line for applying a voltage to a pixel electrode adjacent to said former pixel electrode.

A thin film-transistor manufacturing method comprising:

• an opaque film step of forming an opaque film having a predetermined shape on a substrate:
• an insulating film step of forming an insulating film on said substrate so as to cover said opaque film;
• a source-and-drain-electrode forming step of forming a source electrode and a drain electrode which are made of metallic films having a predetermined line width and keeping a predetermined interval from each other on said formed insulating film;
• a semiconductor-insulating-film-layer step of forming a semiconductor layer and a gate insulating film layer on said insulating film in order above said source electrode and said drain electrode;
• a gate-electrode forming step of forming a metallic film for a gate electrode on said gate insulating film layer;
• a pattern forming step of patterning said semiconductor layer, said gate insulating film layer, and said metallic film for a gate electrode and forming a protruded TFT portion having a thin-film-transistor-channel structure and in which said semiconductor layer and said gate insulating film layer are formed at said position of said gate electrode exceeding said protruded TFT portion;
• wherein
• said source-and-drain-electrode forming step forms at least either of a source electrode and a drain electrode serving as a signal electrode so as to cross said protruded TFT portion formed in said pattern forming step.