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AssigneeSanyo Electric Co., Ltd.
InventorYoshihiro Okada
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A solid state imaging device comprises a plurality of first channel regions of one conductive type arranged in parallel on a surface of a semiconductor substrate of a reverse conductive type. The imaging device further comprises a drain region formed in a space between the plurality of first channel regions, and a plurality of first transfer electrodes formed over the plurality of first channel regions. The plurality of first transfer electrodes are arranged in parallel to one another along a direction intersecting the first channel regions. The imaging device further includes a second channel region of the one conductive type formed on the main surface of the semiconductor substrate as a connected portion of the first channel regions. The second channel region extends along a direction intersecting the first channel regions. The imaging device further comprises a plurality of second transfer electrodes formed over the second channel region and arranged in parallel to one another along a direction intersecting the second channel region. The second channel region has an impurity concentration lower than that of the first channel regions.
A solid state imaging device, comprising:
A method for manufacturing a solid state imaging device including an imaging section having a plurality of light-receiving pixels arranged in a matrix, a vertical transfer section having a plurality of vertical shift registers arranged corresponding to respective columns of the plurality of light-receiving pixels, a horizontal transfer section formed on an output side of the plurality of vertical shift registers, and an output section formed on an output side of the horizontal transfer section, the manufacturing method comprising:
Dependencies are inferred from the claim text.