Method for toolmatching and troubleshooting a plasma processing system
AssigneeLam Research Corporation, a Delaware Corporation
InventorsSeyed Jafar Jafarian-Tehrani, Armen Avoyan
Life of this patent
Estimating the term…
Loading patent…
AssigneeLam Research Corporation, a Delaware Corporation
InventorsSeyed Jafar Jafarian-Tehrani, Armen Avoyan
Estimating the term…
A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.
A method for testing a plasma processing system having a grounded chamber and a bottom electrode, the method comprising:
An apparatus for testing a plasma etching system having a grounded chamber and a bottom electrode comprising:
A program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine to perform a method for testing a plasma processing system having a grounded chamber and a bottom electrode, the method comprising:
An apparatus for testing a plasma processing system having a grounded chamber and a bottom electrode, the apparatus comprising:
Dependencies are inferred from the claim text.