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AssigneeSemEquip, Inc.
InventorsThomas N. Horsky, Brian F. Cohen, Wade A. Krull, George P. Sacco Jr.
Estimating the term…
Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.
A method of ion implantation by producing a high brightness ion beam that extends along an axis by ionizing molecules of a gas or vapor, the molecules containing an implantable species, the method comprising:
The method of any of the foregoing claims in which the brightness of the ion beam upon extraction is more than about 1 mA-cm−2-deg−2×(E0/E), where E is the beam energy, and E0=10 keV.
The method of any of the foregoing claims in which the x-emittance of the beam upon extraction is less than about 70 mm-mrad×(E0/E)1/2 (where E is the beam energy and E0=10 keV), for an ion current density of at least 1 mA/cm2, even for an ion mass of 120 amu.
The method of any of the foregoing claims in which the beam noise of the stream of ions extracted through the outlet aperture is maintained below 1%.
The method of any of the foregoing claims in which the field strength of any magnetic
The method of any of the foregoing claims in which any magnetic field present in the extraction region has a field strength of less than about 20 gauss.
The method of any of the foregoing claims in which the consumption of said gas or vapor is maintained less than 10 sccm.
The method of any of the foregoing claims in which said primary electrons are introduced into the ionization chamber by electron optics in a directed beam generated external to said ionization chamber.
The method of any of the foregoing claims in which each of the molecules to be ionized respectively comprises or consists of at least two atoms of the implantable species.
A method of ion implantation comprising
The method of any of the foregoing claims conducted in a manner to cause the high brightness ion beam to have a low angular divergence at contact with the target of less than about one degree relative to said axis.
An ion implantation system for implanting at a desired low implant energy into a target substrate comprising an ion source for producing molecular ions (based on a molecule having a cluster of atoms of the desired species to be implanted), an acceleration stage enabling the ions to be accelerated to a transport energy substantially greater than the desired implant energy, and prior to the target substrate, a deceleration stage for lowering the energy of the ions to the desired implant energy.
A method of conducting ion implantation by use of the ion implantation system of any of the foregoing claims.
The method of ion implantation of ions at a desired implant energy on a target substrate comprising forming molecular ions (based on a molecule having a cluster of atoms of the desired species to be implanted, accelerating the ions to and transporting the ions at an energy substantially above the implant energy, and prior to implant upon the substrate, decelerating the ions to the implant energy.
An ion implantation system comprising:
Dependencies are inferred from the claim text.