Triode structure of field emission display and fabrication method thereof

A fabricating method of a triode structure of a field emission display, comprising steps of:

• providing a lower substrate made of a transparent and insulating material;
• forming a plurality of transverse-extending conductive layers overlying the inner surface of the lower substrate;
• forming a dielectric layer overlying the conductive layers and the lower substrate;
• forming a plurality of openings arranged in a matrix in the dielectric layer to expose portions of the conductive layers;
• forming a metal layer overlying the dielectric layer, in which the metal layer filling the openings serves as a plurality of contact layers electrically connect the conductive layers, respectively;
• patterning the metal layer on the dielectric layer as a plurality of cathode layers arranged in a matrix and a plurality of lengthwise-extending gate layer, in which each of the cathode layers is connected to each of the contact layers, and each of the gate layers is disposed between two adjacent columns of the cathode layers;
• and
• forming a plurality of emitting layers arranged in a matrix, in which each of the emitting layers is formed overlying an electron-emitting area of each cathode layer.

A triode structure of a field emission display, comprising:

• a lower substrate made of a transparent and insulating material;
• a plurality of lengthwise-extending conductive layers formed overlying the inner surface of the lower substrate;
• a first dielectric layer formed overlying the conductive layers and the lower substrate, in which the first dielectric layer comprises a plurality of openings to expose portions of the conductive layers;
• a plurality of contact layers formed in the openings to electrically connect the conductive layers, respectively;
• a cathode pattern formed overlying the first dielectric layer, in which the cathode pattern comprises a plurality of first lengthwise-extending cathode layers and a plurality of second transverse-extending cathode layers that intersect to define a plurality of rectangular spacings arranged in a matrix;
• a plurality of lengthwise-extending gate layers formed overlying the first dielectric layer, in which each of the gate layers is disposed in each of the rectangular spacings and electrically connected to each of the contact layers;
• a second dielectric layer formed overlying the first dielectric layer and partially filling the space between the cathode pattern and the gate layer, in which the top of the cathode pattern and the top of the gate layer protrude from the second dielectric layer;
• and
• a emitting pattern formed overlying the electron-emitting area of the cathode pattern.

A fabricating method of a triode structure of a field emission display, comprising steps of:

• providing a lower substrate made of a transparent and insulating material;
• forming a plurality of lengthwise-extending conductive layers overlying the inner surface of the lower substrate;
• forming a first dielectric layer overlying the conductive layers and the lower substrate;
• forming a plurality of openings in the first dielectric layer to expose portions of the conductive layers;
• forming a metal layer overlying the first dielectric layer, in which the metal layer filling the openings serve as a plurality of contact layers to electrically connect the conductive layers respectively;
• patterning the metal layer overlying the first dielectric layer as a cathode pattern, in which the cathode pattern comprises a plurality of first lengthwise-extending cathode layers and a plurality of second transverse-extending cathode layer that intersect to define a plurality of rectangular spacings arranged in a matrix;
• patterning the metal layer overlying the first dielectric layer as a plurality of lengthwise-extending gate layers, in which each of the gate layers is disposed in each of the rectangular spacings and electrically connected to each of the contact layers;
• forming a second dielectric layer overlying the first dielectric layer to partially fill the space between the cathode pattern and the gate layer, in which the top of the cathode pattern and the top of the gate layer protrude from the second dielectric layer;
• and
• forming a emitting pattern overlying the electron-emitting area of the cathode pattern.