Insulated gate field emitter array
AssigneeGeneral Electric Company
InventorColin Wilson
Life of this patent
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Abstract
There is provided a field emitter array on a substrate. The field emitter array includes field emitter devices. At least one of the field emitter devices includes a conducting gate layer having a top surface and at least one side surface, disposed over the substrate. The at least one of the field emitter devices also includes a field emitter tip disposed on the substrate adjacent the at least one side surface, and an insulating layer disposed at least on at least one side surface adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
Claims43
A field emitter device on a substrate, comprising:
- a first insulating layer on the substrate;
- a conducting gate layer having a top surface and at least one side surface, disposed on the first insulating layer;
- a field emitter tip disposed on the substrate adjacent the first insulating layer and adjacent to the at least one side surface;
- and
- a second insulating layer disposed at least on at least one side surface located adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
A field emitter array comprising an array of field emitter devices on a substrate, at least one of the field emitter devices of the array comprising:
- a first insulating layer on the substrate;
- a conducting gate layer having a top surface and at least one side surface, disposed on the first insulating layer;
- a field emitter tip disposed on the substrate adjacent the first insulating layer and adjacent to the at least one side surface;
- and
- a second insulating layer disposed at least on at least one side surface located adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
A method of forming a field emitter device on a substrate, the method comprising:
- forming a first insulating layer on the substrate;
- forming a conducting gate layer having a top surface and at least one side surface on the first insulating layer;
- forming a field emitter tip on the substrate adjacent the first insulating layer and the conducting layer;
- and
- forming a second insulating layer on at least one side surface of the conducting gate layer adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
A field emitter device on a substrate, comprising:
- a first insulating layer on the substrate;
- a conducting gate layer having a top surface and at least one side surface, disposed on the first insulating layer;
- a field emitter tip disposed on the substrate adjacent the first insulating layer and adjacent to the at least one side surface;
- and
- an arc prevention layer disposed at least on at least one side surface located adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
A field emitter array comprising an array of field emitter devices on a substrate, at least one of the field emitter devices of the array comprising:
- a first insulating layer on the substrate;
- a conducting gate layer having a top surface and at least one side surface, disposed on the first insulating layer;
- a field emitter tip disposed on the substrate adjacent the first insulating layer and adjacent to the at least one side surface;
- and
- an arc prevention layer disposed at least on at least one side surface located adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
A method of forming a field emitter device on a substrate, the method comprising:
- forming a first insulating layer on the substrate;
- forming a conducting gate layer having a top surface and at least one side surface on the first insulating layer;
- forming a field emitter tip on the substrate adjacent the first insulating layer and the conducting layer;
- and
- forming an arc prevention layer on at least one side surface of the conducting gate layer adjacent the field emitter tip to prevent arcing between the field emitter tip and the conducting gate layer.
Dependencies are inferred from the claim text.