Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
AssigneeIntel Corporation
InventorsLi-Peng Wang, Qing Ma, Valluri Rao
Life of this patent
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Abstract
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
Claims49
A film bulk acoustic resonator formed on a substrate, the film bulk acoustic resonator comprising:
- a layer of piezoelectric material including:
- a first surface proximate the substrate;
- a second surface distal from the surface of the substrate;
- a first conductive layer including a portion in contact with the first surface of the layer of piezoelectric material, the first conductive layer being nonplanar;
- and
- a second conductive layer in contact with the second surface of the layer of piezoelectric material.
A method for forming a device in a substrate comprising:
- depositing a first portion of a first electrode onto the substrate;
- depositing a piezoelectric layer on the substrate and a portion of the first portion of a first electrode, the piezoelectric film layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- and
- depositing a second portion of the first electrode onto the first surface of the piezoelectric film layer and onto the first portion of the first electrode.
A method for forming a device in a substrate comprising:
- placing a first portion of a first electrode onto the substrate;
- placing a piezoelectric layer on the substrate and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- placing a second portion of the first electrode onto the first surface of the piezoelectric film layer and onto the first portion of the first electrode.
A method for forming a device in a substrate comprising:
- depositing a dielectric layer onto the substrate;
- depositing a seed layer onto the dielectric layer;
- depositing a first portion of a first electrode onto the dielectric layer;
- depositing a piezoelectric layer on the dielectric layer and on a portion of the first portion of the first electrode, the piezoelectric layer having a first surface proximate the substrate and a second surface remote from the substrate;
- placing a second electrode on the second surface of the piezoelectric layer;
- removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode;
- removing a portion of the dielectric layer under the piezoelectric layer and under the portion of the first electrode;
- removing a portion of the seed layer under the piezoelectric layer and under the portion of the first electrode;
- depositing a second portion of the first electrode onto the first surface of the piezoelectric film layer and onto the first portion of the first electrode.
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer exposed about the periphery of the opening;
- and
- a layer of piezoelectric material spanning the remaining portion of the opening.
A film bulk acoustic resonator device formed on a substrate having an opening therein, the film bulk acoustic resonator comprising:
- a seed layer of non conductive material;
- and
- a layer of piezoelectric material contacting the seed layer of non-conductive material.
Dependencies are inferred from the claim text.