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AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsWilliam Tze-You Chen, Ho-Ming Tong, Chun-Chi Lee, Su Tao, Jeng-Da Wu, Chih-Huang Chang, Po-Jen Cheng
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An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump made with tin-based material is provided. The under-ball-metallurgy layer at least includes an adhesion layer over the bonding pad, a nickel-vanadium layer over the adhesion layer, a wettable layer over the nickel-vanadium layer and a barrier layer over the wettable layer. The barrier layer prevents the penetration of nickel atoms from the nickel-vanadium layer and reacts with tin within the solder bump to form inter-metallic compound. This invention also provides an alternative under-ball-metallurgy layer that at least includes an adhesion layer over the bonding pad, a wettable over the adhesion layer and a nickel-vanadium layer over the wettable layer. The nickel within the nickel-vanadium layer may react with tin within the solder bump to form an inter-metallic compound.
An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump, wherein material of the solder bump includes tin, the under-ball-metallurgy layer at least comprising:
An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump, wherein material of the solder bump includes tin, the under-ball-metallurgy layer at least comprising:
An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump, wherein material of the solder bump includes tin, the under-ball-metallurgy layer at least comprising:
Dependencies are inferred from the claim text.