(Amended) A method of fabricating an ultra-thin metal film or an ultra-thin metal multilayer film, characterized in that a thin dielectric film is formed on a conductive base material that exhibits metallic conduction in a film thickness that causes the significantly tunneling effect between metals through said thin dielectric film, or a film thickness whereby the valence electrons and holes of the metal composing the conductive base material and the ultra-thin metal film are affected by the many-body effects;
- and the ultra-thin metal films are grown in layer-by-layer, wherein each one atom layer forms a two-dimensionally continuous film, on said thin dielectric film by the deposition method.