Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKazuhiro Shimizu
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Abstract
A floating electrode (201) and an electrode (202) are coupled together by an electrostatic capacitance (C1), the floating electrode (201) and an electrode (203) are coupled together by an electrostatic capacitance (C2), and an electrode (200) and the floating electrode (201) are coupled together by an electrostatic capacitance (C3). The potential of the floating electrode (201) is lower than the potential applied to the electrode (200). The floating electrode (201) covers above the electrode (200). For example, as viewed in section, the elevation angles (α, β) of widthwise edges of the electrode (201) from the near widthwise edges of the electrode (200) should preferably be not more than 45 degrees.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed on said semiconductor substrate;
- a first electrode extending on said insulating layer and applied with a first potential;
- a second electrode isolated from the-surroundings;
- and
- a third electrode applied with a second potential lower than said first potential and providing capacitive coupling with said second electrode,
- wherein there exists a cross section which is perpendicular to a direction of extension of said first electrode and in which said second electrode is located on the side of said first electrode opposite said semiconductor substrate.
Dependencies are inferred from the claim text.