Capacitor and manufacturing method thereof, semiconductor device and substrate for a semiconductor device

A method of manufacturing a capacitor including a capacitor part in which a dielectric film is sandwiched by a pair of electrodes and a support body of an organic polysilane film supporting said capacitor part, comprising the steps of:

• forming a layer of organic polysilane on a surface of a base material;
• forming a first electrode on said layer of organic polysilane;
• forming a dielectric film on said first electrode;
• forming a second electrode on said dielectric film;
• forming an insulation layer on said layer of organic polysilane and on said second electrode;
• said layer of organic polysilane, said first electrode, said dielectric film, said second electrode and said insulation layer forming a layered body on said base material,
• forming a groove in said layer of organic silane and said insulation layer for dividing said layered body into individual capacitors;
• and
• removing said base material.

substrate for mounting a semiconductor chip thereon, comprising:

• a substrate body defined by upper and bottom surfaces;
• a plurality of terminals provided on said top surface for connection with a semiconductor chip mounted on said top surface, said top surface thereby forming a chip-mounting surface;
• a plurality of terminals provided on said bottom surface for external connection, said bottom surface thereby forming a mounting surface;
• and
• a capacitor embedded in said substrate body right underneath said chip-mounting surface,
• said capacitor comprising:
• a capacitor part including a dielectric film sandwiched by a pair of electrodes;
• and
• a support body of an organic polysilane film supporting said capacitor part.

A method of manufacturing a substrate for mounting a semiconductor chip, said substrate having a mounting surface carrying thereon terminals for external connection at a lower principal surface and a chip-mounting surface for carrying a semiconductor chip at an upper principal surface, said substrate further including a capacitor embedded right underneath said chip-mounting surface such that said capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body of an organic polysilane film supporting said capacitor part, said capacitor having an insulation film covering said capacitor part,

• said method comprising the steps of:
• bonding said capacitor on a base;
• forming an insulation layer on said base such that said insulation layer covers said capacitor;
• laminating a plurality of insulation layers on said base so as to cover said capacitor;
• and
• removing said base.

A semiconductor device, comprising:

• a substrate;
• and
• a semiconductor chip mounted on said substrate,
• said substrate comprising:
• a substrate body defined by upper and bottom surfaces;
• a plurality of terminals provided on said top surface for connection with said semiconductor chip mounted on said top surface, said top surface thereby forming a chip-mounting surface;
• a plurality of terminals provided on said bottom surface for external connection, said bottom surface thereby forming a mounting surface;
• and
• a capacitor embedded in said substrate body right underneath said chip-mounting surface,
• said capacitor comprising:
• a capacitor part including a dielectric film sandwiched by a pair of electrodes;
• and
• a support body of an organic polysilane film supporting said capacitor part.