Integrated circuit structures including epitaxial silicon layers in active regions and methods of forming same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Min Kim, Dong-Gun Park, Chang-Sub Lee, Jeong-Dong Choe, Shin-Ae Lee, Seong-Ho Kim
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Abstract
An integrated circuit structure can include an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions and an insulation layer that extends from the isolation structure to beneath the active region. An epitaxial silicon layer extends from the active region through the insulation layer to a substrate beneath the insulation layer.
Claims21
An integrated circuit structure comprising:
- an isolation structure that electrically isolates an active region of an integrated circuit substrate from adjacent active regions;
- an insulation layer extending from the isolation structure to beneath the active region;
- and
- an epitaxial silicon layer that extends from the active region through the insulation layer to a substrate beneath the insulation layer.
A method of forming an integrated circuit structure comprising:
- forming an epitaxial silicon layer from an active region through a silicon layer having a strained crystalline structure to a substrate beneath the silicon layer;
- and then replacing the silicon layer with an insulation layer.
A method of forming an integrated circuit structure comprising:
- forming a silicon layer having a strained crystalline structure beneath an active region of an integrated circuit;
- forming an epitaxial silicon layer from the active region through the silicon layer to a substrate beneath the silicon layer;
- removing the silicon layer from between the active region and the substrate to form a gap;
- and
- forming an insulating layer in the gap.
A method of forming a semiconductor device, comprising:
- sequentially forming at least one pair of a sacrificial layer and a silicon layer on a semiconductor substrate;
- forming an opening exposing the semiconductor substrate by sequentially patterning a predetermined region of at least one pair of the sacrificial layer and the silicon layer;
- selectively growing an epitaxial layer from the exposed semiconductor substrate in the opening, thereby filling the opening;
- forming a trench for forming a field oxide layer by sequentially patterning at least one pair of the sacrificial layer and the silicon layer and an upper part of the semiconductor substrate;
- removing the sacrificial layer;
- forming a trench thermal oxide layer at an inner wall and a bottom of the trench and simultaneously forming an insulation layer along a region where the sacrificial layer is removed, by thermally oxidizing the semiconductor substrate;
- forming a nitride liner on the trench oxide layer;
- and
- filling the trench by stacking a field oxide layer on the nitride liner.
Dependencies are inferred from the claim text.