Gate and cmos structure and mos structure

Abstract

Provided are a novel gate, a CMOS structure, and a MOS structure each of that has low resistance and excellent controllability. The gate is comprised of an intermetallic compound semiconductor that has an electric conductivity in a range of no less than 102 S·m−1, nor more than 105 S·m−1 without impurities and has a band structure like that of a semiconductor.

Dependencies are inferred from the claim text.