Nonvolatile memory and electronic apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An active region, a source region, and a drain region are formed on a single crystal semiconductor substrate or a single crystal semiconductor thin film. Impurity regions called pinning regions are formed in striped form in the active region so as to reach both of the source region and the drain region. Regions interposed between the pinning regions serve as channel forming regions. A tunnel oxide film, a floating gate, a control gate, etc. are formed on the above structure. The impurity regions prevent a depletion layer from expanding from the source region toward the drain region.
Claims23
A nonvolatile memory comprising:
- a single crystal semiconductor;
- a source region, a drain region, and an active region being formed in the single crystal semiconductor;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions.
A nonvolatile memory comprising:
- a substrate having an insulating surface;
- a semiconductor thin film provided over the substrate, said semiconductor film being substantially regarded as a single crystal;
- a source region, a drain region, and an active region in the semiconductor thin film;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions.
A nonvolatile memory comprising:
- a single crystal semiconductor;
- a source region, a drain region, and an active region being formed in the single crystal semiconductor;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions,
- wherein each of said impurity regions comprises an element selected from group 13 or group 15.
A nonvolatile memory comprising:
- a single crystal semiconductor;
- a source region, a drain region, and an active region being formed in the single crystal semiconductor;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions,
- wherein each of said impurity regions comprises an element selected from group 13 or group 15,
- wherein said impurity regions prevent a depletion layer from expanding from the drain region toward the source region.
A nonvolatile memory comprising:
- a substrate having an insulating surface;
- a semiconductor thin film provided over the substrate, said semiconductor film being substantially regarded as a single crystal;
- a source region, a drain region, and an active region in the semiconductor thin film;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions,
- wherein each of said impurity regions comprises an element selected from group 13 or group 15.
A nonvolatile memory comprising:
- a substrate having an insulating surface;
- a semiconductor thin film provided over the substrate, said semiconductor film being substantially regarded as a single crystal;
- a source region, a drain region, and an active region in the semiconductor thin film;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions,
- wherein each of said impurity regions comprises an element selected from group 13 or group 15,
- wherein said impurity regions prevent a depletion layer from expanding from the drain region toward the source region.
An electronic apparatus including nonvolatile memory as a recording medium, said nonvolatile memory comprising:
- a single crystal semiconductor;
- a source region, a drain region, and an active region being formed in the single crystal semiconductor;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions.
An electronic apparatus including nonvolatile memory as a recording medium, said nonvolatile memory comprising:
- a substrate having an insulating surface;
- a semiconductor thin film provided over the substrate, said semiconductor film being substantially regarded as a single crystal;
- a source region, a drain region, and an active region in the semiconductor thin film;
- a plurality of impurity regions provided locally in the active region;
- and
- at least a substantially intrinsic channel forming region interposed between the impurity regions.
Dependencies are inferred from the claim text.