Semiconductor array
AssigneeFreie Universitaet Berlin
InventorsPaul Fumagalli, Holger Lippitz, Christian Muller, Jens J. Paggel
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Abstract
This invention relates to a semiconductor array having a first semiconducting layer and a second semiconducting layer made of a ferromagnetic material, which is coupled to the first semiconducting layer in such a way that a spin-polarized state of the semiconducting charge carriers is injected into the first semiconducting layer. The second semiconducting layer interacts with charge carriers made available outside of the second semiconducting layer in such a way that a high spin polarization is created in the second semiconducting layer at least 250 Kelvin.
Claims27
A semiconductor array comprising
- a first semiconducting layer,
- a second semiconducting layer comprising at least one ferromagnetic material coupled to said first semiconducting layer,
- a charge carrier source coupled to said second semiconducting layer, wherein said charge carrier source is adapted to provide said second semiconducting layer with charge carriers,
- wherein said second semiconducting layer has the property of having a spin polarization at a temperature of at least 250 Kelvin, and
- wherein said second semiconducting layer is adapted to inject a spin-polarized state of at least one semiconducting charge carrier into the first semiconducting layer.
The semiconductor array of claim 3, wherein the first semiconducting layer comprises a semiconducting material based on GaAs or Si.
A method of using a semiconducting layer of a ferromagnetic material as the source for spin-polarized electrons and/or for electron detection comprising
- providing a first semiconducting layer,
- providing a second semiconducting layer comprising a ferromagnetic material;
- coupling said second semiconducting layer to a first semiconducting layer,
- providing the second semiconducting layer with charge carriers by coupling a charge carrier source to the second semiconducting layer, so that, when in use, in the semiconducting layer a spin polarization is produced at at least 250 Kelvin.
A semiconductor array comprising
- a first semiconducting layer,
- a second semiconducting layer comprising at least one ferromagnetic material coupled to said first semiconducting layer,
- a charge carrier source coupled to said second semiconducting layer, wherein said charge carrier source is adapted to provide said second semiconducting layer with charge carriers,
- wherein said second semiconducting layer is capable of having a spin polarization at a temperature of at least 250 Kelvin, and
- wherein said second semiconducting layer is adapted to inject a spin-polarized state of at least one semiconducting charge carrier into the first semiconducting layer.
A semiconductor array comprising
- a first semiconducting layer, and
- a second semiconducting layer made of ferromagnetic material which is coupled to said first semiconducting layer, in such a way that, when in use, a spin-polarized state of at least one semiconducting charge carrier of said second semiconducting layer is injected into the first semiconducting layer, and
- whereby the second semiconducting layer interacts with charge carriers made available outside the second semiconducting layer in such a way that a high spin polarization is produced at 250 Kelvin in the second semiconductor layer 28. The semiconductor array of claim 27, wherein said at least one charge carrier interacting with the second semiconducting layer is made available by doping the first semiconducting layer.
Dependencies are inferred from the claim text.