Method for treating the surface of a semiconductor material
AssigneeCommissariat a l'Energie Atomique
InventorsVincent Derycke, Patrick Soukiassan
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Abstract
Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process. According to the invention, hydrogen (for example) is used to prepare the surface (S) so that it has a controlled organization at the atomic scale, and the surface thus prepared is hydrogenated, the preparation and hydrogenation of the surface cooperating to obtain a predefined electrical state of the surface. The invention is applicable to metallisation or passivation of a semiconducting surface, particularly in microelectronics.
Claims12
Process for treatment of the surface of a semiconducting material in order to put this surface into a predetermined electrical state, the semiconducting material preferably being monocrystalline, in which:
- the surface of the semiconducting material is prepared so that this surface has a controlled organization at the atomic scale such that the said surface can combine with a chosen material, and
- the surface thus prepared is combined with a material chosen from among hydrogen, molecules containing hydrogen, metals, organic molecules and inorganic molecules,
- the preparation and combination of the surface with the material cooperating to obtain the predetermined electrical state of the surface.
Dependencies are inferred from the claim text.