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US 2004/0104399 A1Published application
Light emitting diode having a dual dopant contact layer
AssigneeEpistar Corporation
InventorsChen Ou, Jia-Rong Chang, Chen-Ke Hsu, Chang-Huei Jing
Life of this patent
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Abstract
A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.
Claims18
A light emitting diode (LED) comprising:
- a substrate;
- a light emitting stacked structure formed over the substrate;
- a dual dopant contact layer formed over the light emitting stacked structure, the dual dopant contact layer comprising a plurality of p-type dopants and a plurality of n-type dopants;
- and
- a transparent conductive oxide layer formed over the dual dopant contact layer.
2 more elements
A light emitting diode (LED) comprising:
- an insulating substrate;
- a buffer layer formed over the insulating substrate;
- a first conductivity type contact layer formed over the buffer layer, the first conductivity type contact layer comprising a first upper surface and a second upper surface;
- a multiple quantum well light emitting layer formed over the first upper surface;
- a second conductivity type contact layer formed over the multiple quantum well light emitting layer;
- a dual dopant contact layer formed over the second conductivity type contact layer, the dual dopant contact layer comprising a plurality of p-type dopants and a plurality of n-type dopants;
- a transparent conductive oxide layer formed over the dual dopant contact layer;
- a second conductivity type electrode formed over the transparent conductive oxide layer;
- and
- a first conductivity type electrode formed over the second upper surface.
7 more elements
A light emitting device (LED) comprising:
- a first conductivity type electrode;
- a first conductivity type conductive substrate formed over the first conductivity type electrode;
- a buffer layer formed over the first conductivity type conductive substrate;
- a first conductivity type contact layer formed over the buffer layer;
- a multiple quantum well light emitting layer formed over the first conductivity type contact layer;
- a second conductivity type contact layer formed over the multiple quantum well light emitting layer;
- a dual dopant contact layer formed over the second conductivity type contact layer, the dual dopant contact layer comprising a plurality of p-type dopants and a plurality of n-type dopants;
- a transparent conductive oxide layer formed over the dual dopant contact layer;
- and
- a second conductivity type electrode formed over the transparent conductive oxide layer.
7 more elements
Dependencies are inferred from the claim text.