Semiconductor light-emitting diode
AssigneeSharp Kabushiki Kaisha
InventorsHiroshi Nakatsu, Osamu Yamamoto
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Abstract
A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch Δ a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller: Δa/a=(ad−ae)/ae where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.
Claims10
A light-emitting diode comprising:
- a semiconductor substrate;
- and
- a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate,
- wherein the layered structure comprises:
- a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers;
- and
- a current diffusion layer which is lattice-mismatched with the light-emitting structure, wherein a lattice mismatch Δ a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is −1% or smaller:
- Δa/a=(ad−ae)/ae
- where ad is a lattice constant of the current diffusion layer, and ae is a lattice constant of the light-emitting structure.
Dependencies are inferred from the claim text.