Device using self-organizable polymer

A thin film transistor comprising:

• an insulating layer;
• a gate electrode;
• a structurally ordered semiconductor layer;
• a source electrode;
• and
• a drain electrode,
• wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer,
• wherein the semiconductor layer is prepared by a process comprising:
• creating a composition comprising a liquid and a self-organizable polymer at least partially dissolved in the liquid, resulting in dissolved polymer molecules;
• reducing the solubility of the dissolved polymer molecules to induce formation of structurally ordered polymer aggregates in the composition;
• depositing a layer of the composition including the structurally ordered polymer aggregates;
• and
• drying at least partially the layer resulting in the structurally ordered semiconductor layer, wherein the structural order of the semiconductor layer increases the charge transport capability of the semiconductor layer.