Photodiode array, method of making the same, and radiation detector
AssigneeHamamatsu Photonics K.K.
InventorKatsumi Shibayama
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Abstract
In a photodiode array 1, incident-side depressions 7 formed by thinning from the incident surface side of light to be detected are arranged in an array, whereas opposite-side depressions 11 formed by thinning regions corresponding to regions formed with the incident-side depressions 7 from the side opposite from the incident surface are arranged in an array. The bottom of the opposite-side depressions 11 is formed with a pn junction 3, whereby photodiodes of pn junction type are arranged in an array.
Claims22
A photodiode array comprising a semiconductor substrate having a plurality of incident-side depressions on a light incident surface side and a plurality of opposite-side depressions on the side opposite from the light incident side;
- the opposite-side depressions corresponding to the incident-side depressions, respectively, and having a bottom provided with a pn junction.
A photodiode array comprising a semiconductor substrate formed with a plurality of pn junction type photodiodes in an array on a side opposite from an incident surface of light to be detected;
- the semiconductor substrate being thinned in a region formed with the plurality of photodiodes from the incident surface side of the light to be detected, such that a region held between regions formed with the plurality of photodiodes becomes a projection having a cross section projecting toward the incident surface of the light to be detected;
- the projection being formed with a high concentration impurity region having the same conductivity type as with the incident surface side of the photodiodes for the light to be detected.
A photodiode array comprising:
- a semiconductor substrate having a first conductivity type at least on a side opposite from an incident surface of light to be detected;
- and
- a plurality of photosensitive layers having a second conductivity type arranged in an array within a first conductivity type region on the opposite side of the semiconductor substrate;
- wherein the incident surface side of the semiconductor substrate for the light to be detected is formed with a plurality of depressions arranged in an array by thinning regions corresponding to the photosensitive layers from the incident side;
- and
- wherein a projection partitioning the plurality of depressions is doped with a high concentration of an impurity having the first conductivity type.
A photodiode array comprising:
- a semiconductor substrate doped with a high concentration of an impurity having a first conductivity type;
- a semiconductor layer of the first conductivity type disposed in contact with a side opposite from an incident surface of the semiconductor substrate for light to be detected;
- and
- a plurality of photosensitive layers having a second conductivity type arranged in an array within the semiconductor layer having the first conductivity type;
- the semiconductor substrate being formed like a lattice by eliminating regions corresponding to the photosensitive layers.
A method of making a photodiode array, the method comprising:
- a first step of preparing a substrate formed from a semiconductor of a first conductivity type at least on an incident surface side of light to be detected and on a side opposite therefrom, and doped with an impurity of the first conductivity type on the incident surface side;
- a second step of forming a plurality of photosensitive layers arranged in an array within a first conductivity type region on the opposite side of the substrate;
- and
- a third step of etching and thinning regions corresponding to the photosensitive layers in the substrate from the incident surface side so as to form a plurality of depressions arranged in an array and a lattice-like projection, doped with a high concentration of an impurity having the first conductivity type, partitioning the depressions.
Dependencies are inferred from the claim text.