Topologically tailored sputtering targets
OwnerEal H. Leeinventor
Life of this patent
Estimating the term…
Abstract
In a standard target configuration, sputtered atoms distribute in a wide angle producing a non-uniform film and poor step coverage, mainly because the flux of sputtered atoms are not collimated and the center region of the wafer experiences a higher flux of sputtered atoms than the edge of the wafer. Sputtering targets described herein are topologically and morphologically tailored such that sputtered atoms impinge directly toward a wafer in a narrow cosine distribution. In effect, the target is designed with a built-in collimator. The desired morphology and topography can be accomplished by micro (e.g., parabolic dimples) and/or macro scale (e.g., wafer contour, circular wave contour) modification of the target geometry and topography.
Claims27
A sputtering target, comprising:
- a core material;
- and
- a surface material coupled to the core material, wherein the surface material comprises at least two indentations that form a collimating topography.
A method of forming a self-collimating sputtering target, comprising:
- providing a core material;
- providing a surface material;
- coupling the core material to the surface material to form a sputtering target;
- and
- forming at least two intentional indentations in the surface material, wherein the indentations form a collimating topography.
A method of forming a uniform film on a surface, comprising:
- providing a self-collimating sputtering target;
- providing a surface;
- placing the surface at a distance from the self-collimating sputtering target;
- bombarding the self-collimating sputtering target with an energy source to form at least one atom;
- and
- coating the surface with the at least one atom.
Dependencies are inferred from the claim text.