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US 2004/0103937 A1Published application
Photovoltaic device
AssigneesInteruniversitair Microelektronica Centrum (IMEC), FernUniversitat Hagen
InventorsRenat Bilyalov, Alexander Ulyashin, Jef Poortmans, Wolfgang Fahrner
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Abstract
The present invention is related to a photovoltaic device, the device comprising a first layer of a first semiconductor material of a first conductivity type, a second layer of a second semiconductor material of the opposite conductivity type of the first layer, and a third layer of a third porous semiconductor material situated between the first layer and the second layer. The present invention also provides a method for producing the photovoltaic device.
Claims36
A photovoltaic device, the device comprising:
- a first layer comprising a first semiconductor material comprising a first conductivity type;
- a second layer comprising a second semiconductor material of a second opposite conductivity type, wherein the second conductivity type is opposite the first conductivity type;
- and
- a third layer comprising a third semiconductor material, wherein the third layer is situated between the first layer and the second layer, wherein the third layer comprises a porous layer, wherein the third layer comprises a translucent layer, and wherein the third layer comprises a diffusion barrier.
1 more element
A method for fabricating a photovoltaic device, the method comprising the steps of:
- providing a second layer comprising a second semiconductor material comprising a second conductivity type;
- fabricating or depositing a third layer comprising a third semiconductor material on the second layer, wherein the third layer comprises a porous layer, wherein the third layer comprises a translucent layer, and wherein the third layer comprises a diffusion barrier;
- and
- fabricating or depositing a first layer on the third layer, wherein the first layer comprises a first semiconductor material comprising a first conductivity type, and wherein the second conductivity type is opposite the first conductivity type.
1 more element
A method for fabricating a photovoltaic device, the method comprising the steps of:
- providing a second layer comprising a second semiconductor material comprising a second conductivity type;
- fabricating or depositing a fourth layer on the second layer, wherein the fourth layer comprises a fourth semiconductor material, wherein the fourth layer comprises a porous layer, and wherein the fourth semiconductor material comprises a non-doped crystalline silicon semiconductor material;
- fabricating or depositing a fifth layer on the fourth layer, wherein the fifth layer comprises a material selected from the group consisting of amorphous silicon semiconductor material, nanocrystalline semiconductor material, and microcrystalline silicon semiconductor material, wherein the fourth layer and the fifth layer comprise a same conductivity type;
- fabricating or depositing a third layer on the fifth layer, wherein the third layer comprises a porous layer, the third layer comprising a third semiconductor material, wherein the third layer comprises a translucent layer, and wherein the third layer comprises a diffusion barrier;
- and
- fabricating or depositing a first layer on the third layer, wherein the first layer comprises a first semiconductor material comprising a first conductivity type, and wherein the second conductivity type is opposite the first conductivity type.
3 more elements
A method for fabricating a photovoltaic device, the method comprising the steps of:
- providing a second layer comprising a second semiconductor material comprising a second conductivity type;
- fabricating or depositing a third layer comprising a third semiconductor material on the second layer, wherein the third layer comprises a porous layer, wherein the third layer comprises a translucent layer, and wherein the third layer comprises a diffusion barrier;
- fabricating or depositing an amorphous silicon layer on the third layer;
- and
- fabricating or depositing a first layer on the amorphous silicon layer, wherein the first layer comprises a first semiconductor material comprising a first conductivity type, and wherein the second conductivity type is opposite the first conductivity type.
2 more elements
A method for fabricating a photovoltaic device, the method comprising the steps of:
- providing a second layer comprising a second semiconductor material comprising a second conductivity type;
- fabricating or depositing a fourth layer on the second layer, wherein the fourth layer comprises a fourth semiconductor material, wherein the fourth layer comprises a porous layer, and wherein the fourth semiconductor material comprises a non-doped crystalline silicon semiconductor material;
- fabricating or depositing a fifth layer on the fourth layer, wherein the fifth layer comprises a material selected from the group consisting of amorphous silicon semiconductor material, nanocrystalline semiconductor material, and microcrystalline silicon semiconductor material, wherein the fourth layer and the fifth layer comprise a same conductivity type;
- fabricating or depositing a third layer on the fifth layer, the third layer comprising a third semiconductor material, wherein the third layer comprises a porous layer, wherein the third layer comprises a translucent layer, and wherein the third layer comprises a diffusion barrier;
- fabricating or depositing an amorphous silicon layer on the third layer;
- and
- fabricating or depositing a first layer on the amorphous silicon layer, wherein the first layer comprises a first semiconductor material comprising a first conductivity type, and wherein the second conductivity type is opposite the first conductivity type.
4 more elements
Dependencies are inferred from the claim text.