Metal chalcogenide composite nano-particles and layers therewith

A dispersion comprising a metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.

A process for preparing a dispersion comprising a metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal, comprising the steps of preparing a composite metal chalcogenide nano-particle containing an n-type semiconducting chalcogenide and a p-type semiconducting p-type semiconducting chalcogenide, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV.

A layer comprising metal chalcogenide composite nano-particles comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.

A photovoltaic device comprising a layer comprising metal chalcogenide composite nano-particles comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less than 50 atomic percent of said metal.

A process for using a metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of said metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of said metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of said metal and is less-than 50 atomic percent of said metal, in a photovoltaic device.