Manganese alloy sputtering target and method for producing the same
AssigneeNippon Mining & Metals Co., Ltd.
InventorYuichiro Nakamura
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Abstract
A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided, and a method for producing a forged manganese alloy target stably by eliminating the drawbacks of manganese alloy that it is susceptible to cracking and has a low rupture strength. A manganese alloy sputtering target which can form a thin film exhibiting high characteristics and high corrosion resistance while suppressing generation of nodules or particles is thereby obtained.
Claims16
A manganese alloy sputtering target characterized in that oxygen is 1000 ppm or less, sulfur is 200 ppm or less and a forged texture is provided.
A manufacturing method of a manganese alloy sputtering target characterized in that a manganese alloy ingot obtained by melting with the likes of an inductive melting method, arc melting method or electron beam melting method is forged at an average actual strain rate of 1×10−2 to 2×10−5 (1/s).
Dependencies are inferred from the claim text.