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US 2004/0103724 A1Published application
Semiconductor pressure sensor
AssigneeFujikura Ltd.
InventorsTakashi Takizawa, Tatsuo Suemasu, Satoshi Yamamoto
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Abstract
The semiconductor pressure sensor includes a substrate (20). The sensor includes a diaphragm (26) implemented in the substrate (26) and being displaceable by a pressure medium acting on a side of the substrate (26). The sensor includes sensor circuitry (22, 23) implemented on the opposite side of the substrate in coincidence with the diaphragm (26) for detecting displacement of the diaphragm (26) for pressure.
Claims59
A semiconductor pressure sensor comprising:
- a substrate comprising:
- a first-surface and a second surface opposite to the first surface;
- a diaphragm formed in the substrate and arranged to be displaceable by a pressure medium acting on the first surface of the substrate;
- and
- a sensor arranged on the second surface of the substrate to detect displacement of the diaphragm.
2 more elements
A semiconductor pressure sensor, comprising:
- a support and a silicon chip joined to the support,
- the silicon chip comprising:
- a diaphragm arranged to be displaceable under pressure applied to a first side of the silicon chip;
- and sensor circuitry arranged on a second side of the silicon chip, wherein:
- the sensor circuitry comprises a piezo-resistive element having a resistance variable dependent upon displacement of the diaphragm;
- and
- the second side of the silicon chip and the support are shaped to define a space therebetween.
4 more elements
A method of forming a semiconductor pressure sensor comprising:
- forming a silicon substrate comprising a first and second surface;
- forming a diaphragm in the first surface of the substrate so that it is displaceable by a pressure medium acting on the first surface of the substrate;
- and
- forming a sensor on the second surface of the silicon substrate to detect displacement of the diaphragm.
1 more element
Dependencies are inferred from the claim text.