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US 2004/0072425 A1Published application
Mbe-method for production of a gallium manganese nitride ferromagnetic film
AssigneeWiSys Technology Foundation, Inc.
InventorsYongijie Cui, Lian Li
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Abstract
Films of gallium manganese nitride are grown on a substrate by molecular beam epitaxy using solid source gallium and manganese and a nitrogen plasma. Hydrogen added to the plasma provides improved uniformity to the film which may be useful in spin-based electronics.
Claims18
A method for the manufacture of a gallium manganese nitride film comprising the steps of:
- (a) preparing a substrate for molecular beam epitaxy;
- and
- (b) applying gallium and manganese to the substrate using molecular beam epitaxy in the presence of a nitrogen and hydrogen reactive species.
Dependencies are inferred from the claim text.