US 2004/0072401 A1 · Method for forming capacitor

Abstract

A capacitor is provided that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level, andfurther, permits dependence of the leakage current on temperatures to besmall. Thatis, capacitor openings are formed in an inter layer silicon oxide layer and a TiN film is patterned so that TiN films are left only within the openings to form lower electrodes within the openings. Subsequently, a Zr- and/or Hf-containing oxide film (represented by the formula, multicomponent Zr.sub.x.Hf.sub.1-x.O.sub.2 film (0≦x≦1)) formed from a metal-containing organic compound as a reactant and a Ti-containing oxide film are laminated to form capacitor dielectrics. After deposition of the Zr- and/or Hf-containing oxidefilm, the Zr- and/or Hf-containingoxidefilmissubjected to heat treatment to be performed in an oxidizing ambient to remove residual carbon being retained in the Zr- and/or Hf-containing oxide film, leading to formation of a capacitor that is optimal for use in DRAM and has high dielectric constant, and allows leakage current flowing therethrough to be maintained at a low level.

Claims16

Dependent claims

A method for forming a capacitor, comprising:

(a) forming a lower electrode on a semiconductor substrate;
(b) subjecting said substrate to an AtomicLayer Deposition (ALD) processing using a metal-containing organic compound containing one metal and an oxidizing agent to deposit a first metal oxide film on said lower electrode;
(c) subjecting said substrate to heat treatment to be performed in an oxidizing ambient in order to remove residual carbon being retained in said first metal oxide film, resulting in formation of a first insulating film;
(d) subjecting said substrate to an ALD processing using a metal-containing compound containing an alternative metal different from said one metal and an oxidizing agent to deposit asecondmetal oxide filmon said first insulating film, resulting in formation of a second insulating film;
and
(e) forming an upper electrode on said second insulating film in order to forma capacitor including said lower electrode, first insulating film, second insulating film and upper electrode.

3 more elements

Dependencies are inferred from the claim text.

Method for forming capacitor

Life of this patent

Method for forming capacitor

Life of this patent

Abstract

Claims16