Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device
AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki
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AssigneeFujitsu Limited
InventorsMiwa Kozawa, Koji Nozaki
Estimating the term…
The present invention provides a resist pattern thickening material and the like which can thicken a resist pattern and form a fine space pattern, exceeding exposure limits of exposure light used during patterning. The resist pattern thickening material contains a resin and a surfactant. In a process for forming a resist pattern of the present invention, after a resist pattern to be thickened is formed, the resist pattern thickening material is coated on a surface thereof. A process for manufacturing a semiconductor device of the present invention includes: a step of, after forming a resist pattern to be thickened on an underlying layer, coating the thickening material on a surface of the resist pattern to be thickened so as to thicken the resist pattern to be thickened and form a resist pattern; and a step of patterning the underlying layer by etching by using the resist pattern.
A resist pattern thickening material comprising:
A resist pattern comprising:
A process for forming a resist pattern, comprising the steps of:
A semiconductor device comprising a pattern formed by using a resist pattern which has been thickened by a resist pattern thickening material wherein the resist pattern thickening material comprises a resin;
A process for manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.