Exposure method and exposure apparatus using complementary division mask, and semiconductor device and method for making the same

A semiconductor device formed by an exposure process, said exposure process including:

• a first step for detecting positions of alignment marks provided at the respective exposure objective unit regions, aligning a complementary divided mask based on said detected positions of alignment marks, and exposing the respective exposure objective unit regions in a first region including a plurality of exposure objective unit region in a middle portion of a semiconductor wafer;
• and
• a second step for determining coordinates of exposure objective regions in a second region, outside of said first region, where alignment of a complementary divided mask by detection of alignment marks cannot be used, based on the positions of alignment marks detected at said first step in said second region, aligning said complementary divided mask, and exposing regions.

A method of producing a semiconductor device, said method having an exposure process using a complementary divided mask, said exposure process comprising:

• a first step for detecting positions of alignment marks provided at the respective exposure objective unit regions, aligning a complementary divided mask based on said detected positions of alignment marks, and exposing the respective exposure objective unit region in a first region including a plurality of exposure objective unit region at a middle portion of a semiconductor wafer;
• and
• a second step for determining coordinates of the respective exposure objective regions in a second region, outside of said first region, where alignment of said complementary divided mask by detection of said alignment marks cannot be used, based on said positions of alignment marks detected at said first step in said second region, aligning said complementary divided mask, and exposing regions.