# US 2004/0072083 A1 · Photomask for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2004/0072083 A1 - Document ID: US20040072083A1 - Status: Published application - Kind: A1 - Application number: 10/648,236 - Filed: 2003-08-27 - Published: 2004-04-15 - Earliest claimed: 2002-08-29 - Assignees: Sanyo Electric Co., Ltd. - Inventors: Kouichi Saitou; Ryu Shimizu - Web page: https://patentgrep.com/patent/US20040072083A1 ## CPC - G03F 1/50: Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A photomask for use in photolithographic processing performed to manufacture a semiconductor device. The photomask includes four square regions, each having a mask pattern. The four mask patterns are used successively and re formed so that the photomask is used oriented in substantially the same direction. ## Claims ### Claim 1 A photomask for use in a plurality of photolithography steps performed to manufacture a semiconductor device having a plurality of layers, the photomask comprising: a plurality of mask patterns, each used in an associated one of the photolithography steps and corresponding to an associated one of the layers, wherein the mask patterns are arranged so that the photomask is always used oriented in substantially the same direction. ### Claim 2 (depends on 1) The photomask according to claim 1, wherein the mask patterns are arranged on the photomask so that the photomasks are sequentially and successively used during the photolithography steps. ### Claim 3 (depends on 1) The photomask according to claim 1, wherein the mask patters are each formed in one of a plurality of rectangular regions, the rectangular regions being arranged adjacent to one another in the photomask, at least one of a width and length of one of the rectangular regions being substantially the same as at least one of a width and length of another one of the rectangular regions. ### Claim 4 (depends on 3) The photomask according to claim 3, wherein the rectangular regions have the same area. ### Claim 5 (depends on 3) The photomask according to claim 3, wherein each of the rectangular regions is square. ### Claim 6 (depends on 1) The photomask according to claim 1, wherein the mask patterns include a mask pattern mainly configured by a line pattern for patterning wirings of the semiconductor device and a mask pattern mainly configured by a hole pattern for patterning connection holes of the semiconductor device. ### Claim 7 (depends on 3) The photomask according to claim 3, further comprising a target pattern arranged in each rectangular region to form a target mark that is used to position a mask pattern used in a following one of the photolithography steps. ### Claim 8 (depends on 7) The photomask according to claim 7, wherein the target pattern is arranged in a predetermined area of its respective rectangular region. ### Claim 9 A method for manufacturing a semiconductor device having a plurality of layers, the method comprising: providing a photomask including a plurality of mask patterns, with each mask pattern corresponding to a different layer of the semiconductor device to be manufactured; and performing photolithographic processing of each of the layers using the mask pattern of the photomask corresponding to that layer with the photomask arranged each time oriented in a direction that is substantially the same for each layer and exposing only the mask pattern for the layer for which photolithographic processing is currently being performed and covering the other mask patterns. ### Claim 10 (depends on 9) The method according to claim 9, wherein the mask patterns are rectangular regions arranged adjacent to one another, and the step of performing photolithographic processing includes rotating a blind to expose only one of the mask patterns and cover the remaining mask patterns when proceeding from photolithographic processing of one layer to another layer. ### Claim 11 (depends on 10) The method according to claim 10, wherein each rectangular region includes a target pattern for patterning a target mark for aligning the photomask, and the step of performing photolithographic processing includes aligning the target mark patterned for one of the layers with the mask pattern used in a next one of the layers when proceeding from photolithographic processing of one layer to the next layer. ### Claim 12 (depends on 11) The method according to claim 11, wherein the photomask is moved linearly when proceeding from photolithographic processing of one layer to the next layer. ### Claim 13 (depends on 12) The method according to claim 12, wherein the photomask is not rotated when proceeding from photolithographic processing of one layer to the next layer. ### Claim 14 (depends on 11) The method according to claim 11, wherein each of the target patterns is formed in a predetermined area of its respective rectangular region. ### Claim 15 A photomask for use in performing photolithographic processing to manufacture a semiconductor device having a plurality of layers, the photomask comprising: a plurality of rectangular regions arranged adjacent to one another; a plurality of mask patterns, each corresponding to an associated one of the layers; and a target pattern arranged in each rectangular region for aligning the photomask, wherein each target pattern is arranged in a predetermined area of the rectangular region, the predetermined area being defined at substantially the same position in each of the rectangular regions. ### Claim 16 A method for manufacturing a semiconductor device using a photomask including a plurality of mask patterns having at least a first mask pattern and a second mask pattern, the method comprising: exposing the first pattern while covering the other patterns to transcribe the first mask pattern on a semiconductor wafer; linearly moving the photomask and the semiconductor relative to each other to align the second mask pattern with the semiconductor wafer; and exposing the second mask pattern while covering the other mask patterns to transcribe the second mask pattern on the semiconductor wafer. ### Claim 17 (depends on 16) The method according to claim 16, wherein the mask patterns each have a plurality of rectangular regions having substantially the same dimensions and arranged adjacent to one another, the method further comprising: rotating a blind to expose one of the rectangular regions and cover the other rectangular regions. ### Claim 18 (depends on 17) The method according to claim 17, wherein said rotating a blind includes rotating the blind by 90 degrees to expose one of the rectangular regions and cover the other rectangular regions.