US 2004/0071875 A1Published application

Yttrium-doped bismuth titanate thin film and preparation thereof

AssigneePostech Foundation

InventorsShi-Woo Rhee, Sang-Woo Kang

Life of this patent

Estimating the term…

Abstract

A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device: Bi4−xYxTi3O12 (I) wherein x is an integer of 0.1 to 2.

Claims9

Dependent claims

A bismuth yttrium titanate (BYT) thin film having the composition of formula (I):

Bi4−xYxTi3O12 (I)
wherein x is an integer of 0.1 to 2.

Dependencies are inferred from the claim text.

Facts

Application: 10/672,753Filed 26 Sep 2003
Priority: KR 2002-5911128 Sep 2002
Published: 15 Apr 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10P 14/69398
The material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides: the material having a perovskite…
C23C 16/40
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: oxides
H10P 14/668
Characterised by the type of materials: the materials being characterised by the deposition precursor materials
Y10T 29/49002
Method of mechanical manufacture: electrical device making

Family

US 7,250,228 B2Related patent
US 2004/0071875 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

patentgrep

Loading patent…

patentgrepSearch patents

Back to results