Apparatus and method for single-wafer-processing type CVD

A method of film deposition comprising the steps of:

• placing a wafer on a susceptor positioned inside a wafer-handling chamber disposed under a reaction chamber included in a single-wafer-processing type CVD apparatus;
• positioning the wafer inside the reaction chamber by raising the susceptor;
• when the susceptor moves to the position, separating the reaction chamber and the wafer-handling chamber by making closely in contact a periphery of the susceptor and a circular separation plate disposed coaxially with the susceptor and between the reaction chamber and the wafer-handling chamber;
• emitting a jet of reaction gas from a showerhead disposed inside the reaction chamber onto the wafer to be processed;
• depositing a film on the wafer;
• during the deposition, discharging an inert gas from the wafer-handling chamber to the reaction chamber through at least one gas discharge hole formed through the susceptor from its bottom to its top, and via a periphery of the wafer placed on the susceptor and a inner periphery of the circular separation plate;
• evacuating the reaction chamber through an exhaust duct, which is positioned in the vicinity of the showerhead and is provided circularly along an inner wall of the reaction chamber;
• and
• after the deposition, lowering the susceptor and moving the wafer to the wafer-handling chamber.

A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:

• a reaction chamber comprising:
• (i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;
• (ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;
• (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber;
• and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber;
• and
• a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature.

A single-wafer-processing type CVD apparatus for forming a film on a semiconductor wafer, comprising:

• a reaction chamber comprising:
• (i) a susceptor disposed therein for placing and heating a wafer, wherein at least one gas discharge hole is provided in the susceptor to flow a gas into the reaction chamber via a periphery of the wafer into the reaction chamber, said susceptor being movable vertically;
• (ii) a showerhead disposed inside the reaction chamber opposed to and parallel to the susceptor for emitting a jet of reaction gas toward the wafer;
• (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along a inner wall of the reaction chamber;
• and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with a bottom of the exhaust duct, said separation plate having a sealing portion to seal a periphery of the susceptor when the susceptor rises, thereby separating the reaction chamber from a wafer-handling chamber configured to be disposed under the reaction chamber, said circular separation plate having an inner circumference inside the sealing portion to cover the at least one gas discharge hole;
• and
• a temperature-controlling apparatus for regulating the temperature of the showerhead at a given temperature.