Temperature measuring sensor incorporated in semiconductor substrate, and semiconductor device containing such temperature measuring sensor

A semiconductor device comprising:

• a semiconductor substrate on which a main circuit section is defined;
• and
• a temperature measuring sensor incorporated in said semiconductor substrate so as to measure a real temperature of said semiconductor substrate,
• said temperature measuring sensor including:
• a semiconductor diode formed in said semiconductor substrate;
• and
• a resistor formed in said semiconductor substrate and connected to said semiconductor diode in series.
• wherein
• a first forward constant current is supplied to said semiconductor diode through said resistor such that a potential difference VA1 is produced between terminal ends of both said semiconductor diode and said resistor connected in series, and such that a potential difference VF1 is produced between terminal ends of said semiconductor diode;
• a second forward constant current is supplied to said semiconductor diode through said resistor such that a potential difference VA2 is produced between terminal ends of both said semiconductor diode and said resistor connected in series, and such that a potential difference VF2 is produced between terminal ends of said semiconductor diode;
• and
• the measurement of said real temperature is carried out based on said four potential differences VA1, VF1, VA2 and VF2.

A temperature management system for managing a temperature of a semiconductor device containing a temperature measuring sensor incorporated in a substrate of said semiconductor device, said temperature measuring sensor including a semiconductor diode formed in said substrate, and a resistor formed in said substrate and connected to said semiconductor diode in series, which temperature management system comprises:

• an electric constant current source system that selectively supplies a first forward constant current and a second forward constant current to said temperature measuring sensor;
• upon supplying said first forward constant current to said semiconductor diode through said resistor, a potential difference VA1 being produced between terminal ends of both said semiconductor diode and said resistor connected in series, and a potential difference VF1 being produced between terminal ends of said semiconductor diode;
• upon supplying said second forward constant current to said semiconductor diode through said resistor, a potential difference VA2 being produced between the terminal ends of both said semiconductor diode and said resistor connected in series, and a potential difference VF2 being produced between the terminal ends of said semiconductor diode;
• a temperature calculation system that calculates a real temperature T of the substrate of said semiconductor device based on said four potential differences VA1, VF1, VA2, and VF2,
• a cooling system that is associated with said semiconductor device to suppress a rise in the real temperature T of the substrate of said semiconductor device;
• a monitor system that monitors whether or not the real temperature T of the substrate of said semiconductor device exceeds a predetermined upper temperature limit;
• and
• a control system that activates said cooling system to thereby cool said semiconductor device when it is confirmed by said monitor system that the temperature T of the substrate of said semiconductor device exceeds the predetermined upper temperature limit.

A semiconductor device comprising:

• a semiconductor substrate on which a main circuit section is defined;
• a first temperature measuring sensor incorporated in said semiconductor substrate so as to measure a real temperature of said semiconductor substrate;
• a second temperature measuring sensor incorporated in said semiconductor substrate so as to measure a temperature of said semiconductor substrate including an offset amount;
• and
• a temperature calibration circuit incorporated in said semiconductor substrate and associated with said second temperature measuring sensor so as to calibrate the temperature of said semiconductor substrate, measured by the second temperature measuring sensor, to eliminate the offset amount therefrom,
• wherein said temperature calibration circuit includes a memory medium that stores calibration data for the calibration of the temperature of said semiconductor substrate including the offset amount, and said calibration data is prepared based on the real temperature of said semiconductor substrate measured by said first temperature measuring sensor, and is then stored in the memory medium of said temperature calibration circuit.

A temperature measuring method of measuring a temperature of a semiconductor substrate, using a temperature measuring sensor incorporated therein, said temperature measuring sensor having a semiconductor diode formed in said semiconductor substrate, and a resistor formed in said semiconductor substrate and connected to said semiconductor diode in series, which method comprises:

• supplying a first forward constant current to said semiconductor diode through said resistor such that a potential difference VA1 is produced between terminal ends of both said semiconductor diode and said resistor connected in series, and such that a potential difference VF1 is produced between terminal ends of said semiconductor diode;
• supplying a second forward constant current to said semiconductor diode through said resistor such that a potential difference VA2 is produced between terminal ends of both said semiconductor diode and said resistor connected in series, and such that a potential difference VF2 is produced between terminal ends of said semiconductor diode;
• and
• calculating a real temperature T of the semiconductor substrate based on said potential differences VA1, VF1, VA2, and VF2.