Method for the programming of an anti-fuse, and associated programming circuit
AssigneeSTMicroelectronics S.r.l.
InventorsStephane Pecheyran, Jean-Michel Moragues, Benjamin Duval
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Abstract
An anti-fuse transistor includes a source, a drain and a well connected together, and a gate. A method for programming the anti-fuse transistor includes applying a reference potential to the gate, and applying a high potential greater than the reference potential to the drain of the anti-fuse transistor. A first access transistor is connected to the anti-fuse transistor. The first access transistor includes a drain connected to the source of the anti-fuse transistor, and a source for receiving the high potential. Applying the high potential to the drain of the anti-fuse transistor includes turning on the first access transistor.
Claims8
A method for the programming of an anti-fuse transistor (100) comprising, on the one hand, a drain (102), a source (103) and a well (101) connected together and, secondly, a gate (104), wherein a reference potential (VSS) is applied to the gate (104) of the anti-fuse transistor and a high potential (HT), greater than the reference potential, is applied to the drain (102) of the anti-fuse transistor (100).
A circuit comprising an anti-fuse transistor (100) comprising, on the one hand, a drain (102), a source (103) and a well (101) connected together and, on the other hand, a gate (104), the circuit also comprising a first access transistor (110) comprising a source to which a high potential (HT) is applied during a programming phase and a drain connected to the source (103) of the anti-fuse transistor (100), a reference potential smaller than the high potential being applied on the gate of the anti-fuse transistor.
A circuit according to claim 4, also comprising a second access transistor (120) comprising a drain connected to the gate (104) of the anti-fuse transistor (100), and a source to which a reference potential (VSS) is applied.
Dependencies are inferred from the claim text.